Durham, North Carolina – Tier 1 automotive supplier Delphi Technologies and semiconductor manufacturer Cree Inc. plan to jointly develop silicon carbide semiconductor device technology to enable faster, smaller, lighter, and more powerful electronic systems for electric vehicles (EVs).
Cree’s silicon carbide-based metal–oxide–semiconductor field-effect transistor (MOSFET) technology coupled with Delphi Technologies’ traction drive inverters, DC/DC converters, and chargers will extend driving range and deliver faster charging times of EVs, while lowering weight, conserving space, and reducing cost.
The Cree silicon carbide MOSFETs will initially be used in Delphi Technologies’ 800V inverters for a premium global automaker. Production will ramp in 2022.
Delphi CEO Richard F. Dauch said, “Our collaboration with Cree will create a significant benefit to automakers as they work to balance meeting stricter global emissions regulations with consumer appetite for electric vehicles. Overcoming driver anxiety related to electric vehicle range, charging times, and cost will be a boon for the industry.”
IHS estimates that, by 2030, 30 million electrified light vehicles will be sold representing 27% of all vehicles sold annually. Inverters are one of the highest-value electrification components and their efficiency has an industry-changing impact on many aspects of vehicle performance.
Cree CEO Gregg Lowe said, “Cree is continuing to expand capacity to meet market demands with our industry-leading power MOSFETs to help achieve a new, more efficient future.”
Cree recently announced silicon carbide capacity expansion to generate up to a 30x increase in capacity. The company offers silicon carbide and gallium nitride (GaN) power and radio frequency (RF) solutions through its Wolfspeed business unit.